/ Home
/ SUBMISSION

/ The BJNANO
/ Diamond Open Access
/ Journal Statistics
/ Editorial Board
/ Community
/ Call for papers

/ Latest Articles
/ Most accessed
/ Thematic issues
/ Volumes
/ Authors

/ Alerts

/ TWITTER
/ LINKEDIN
/ Mastodon
/ RSS FEED

Empty search

Article Type

Publication Date Range

Search Tips

This search combines search strings from the content search (i.e. "Full Text", "Author", "Title", "Abstract", or "Keywords") with "Article Type" and "Publication Date Range" using the AND operator.

Search Examples

aromatic	the word “aromatic”
aromatic aldehyde	the word “aromatic” OR “aldehyde”
+aromatic +aldehyde	both words “aromatic” AND “aldehyde”
+aromatic -aldehyde	the word “aromatic” but NOT “aldehyde”
“aromatic aldehyde”	the exact phrase “aromatic aldehyde”
benz*	words which begin with “benz”, such as “benzene” or “benzyl”
benz*yl	words that begin with “benz” and end with “yl”, such as “benzyl” or “benzoyl”
benzyl~	words that are close to the word “benzyl”, such as “benzoyl” (i.e., fuzzy search)

BROWSE
Latest Articles
Most accessed
thematic issues
volumes
authors

BROWSE

Latest Articles Most Accessed Thematic Issues Volumes Authors

Author

1 article(s) from Beneyton, Rémi

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si₁₋_xGe_x and Si layers

Richard Daubriac,
Emmanuel Scheid,
Hiba Rizk,
Richard Monflier,
Sylvain Joblot,
Rémi Beneyton,
Pablo Acosta Alba,
Sébastien Kerdilès and
Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

PDF

Figure 1: Removed SiGe thickness measured by different methods (TEM, XRD and ellipsometry) as a function of t...

Jump to Figure 1

Figure 2: Removed SiGe thickness (measured by ellipsometry) as a function of etching time for two different G...

Jump to Figure 2

Figure 3: (a) Sheet resistance R_S, (b) Hall dose N_H, and (c) Hall mobility µ_H as functions of the etching tim...

Jump to Figure 3

Figure 4: Depth profiles of (a) active dopant concentration and (b) carrier mobility extracted from the DHE m...

Jump to Figure 4

Figure 5: Sheet resistance as a function of the laser energy density for 6 nm SiGeOI (x_Ge = 0.25) layer impla...

Jump to Figure 5

Figure 6: Hall effect measurements (raw data: (a) R_S, (b) N_H and (c) µ_H) of the SiGeOI sample (x_Ge = 0.25) im...

Jump to Figure 6

Figure 7: Depth profiles of (a) active dopant concentration and (b) carrier mobility extracted from DHE measu...

Jump to Figure 7

Figure 8: Concentration depth profiles of (a) arsenic and (b) oxygen measured by SIMS in 11 nm thick SOI wafe...

Jump to Figure 8

Figure 9: Hall effect measurements (raw data: (a) R_S, (b) N_H and (c) µ_H) of the SOI samples implanted with ar...

Jump to Figure 9

Figure 10: Active dopant concentration depth profiles as extracted by DHE measurements from 11 nm thick SOI wa...

Jump to Figure 10

Album

Supp Info

Full Research Paper

Published 05 Jul 2018

Full text

Other Beilstein-Institut Open Science Activities

/ Help / Support & Contact / Alerts / Privacy Policy / Terms & Conditions / Impressum

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si₁₋_xGe_x and Si layers